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| NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features * * * * * Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish DC-DC Conversion Load/Power Switching Single or Dual Cell Li-Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs Parameter Symbol N-Ch P-Ch N-Ch P-Ch N-Ch C P-Ch C N-Ch C P-Ch C TA=25C TA=85C TA=25C TA=85C TA=25C TA=85C TA=25C TA=85C tp10 ms TA=25C TA=85C TA=25C TA=85C TJ, TSTG IS TL IDM PD VDSS VGS ID Value 20 -8.0 12 8.0 0.63 0.46 -0.775 -0.558 0.91 0.65 -1.1 -0.8 1.2 0.27 0.14 0.55 0.29 -55 to 150 0.63 -0.775 260 C C A A W A V Unit V http://onsemi.com V(BR)DSS N-Ch 20 V RDS(on) TYP 0.29 W @ 4.5 V 0.36 W @ 2.5 V 0.22 W @ -4.5 V ID MAX 0.63 A Applications * * * * P-Ch -8.0 V 0.32 W @ -2.5 V 0.51 W @ -1.8 V -0.775 A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Drain-to-Source Voltage a o Sou ce o age Ga e o Sou ce o age Gate-to-Source Voltage Continuous Drain Current Co uous a Cu e St d St t - Steady State (Based on RqJA) S1 SOT-363 SC-88 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View 6 1 Co Continuous Drain Current uous a Cu e - Steady State St d St t (Based on RqJL) Pulsed Drain Current Power Dissipation - S eady S a e oe ss a o Steady State (Based on RqJA) (B d Power Dissipation - S eady S a e oe ss a o Steady State (Based on RqJL) (B d SC-88 (SOT-363) CASE 419B Style 26 MARKING DIAGRAM & PIN ASSIGNMENT 1 Source-1 TCD Gate-1 Drain-2 6 Drain-1 Gate-2 Source-2 Top View = Specific Device Code = Date Code Operating Junction and Storage Temperature Sou ce Current (Body ode) Source Cu e ( ody Diode) N-Ch P-Ch Lead Temperature for Soldering Purposes (1/8" from case for 10 s) THERMAL RESISTANCE RATINGS (Note 1) Junction-to-Ambient Ju c o o be - Steady State St d St t Ju c o o ead ( a ) Junction-to-Lead (Drain) - Steady State St d St t Typ Max Typ Max TC D RqJA RqJL 400 460 194 226 C/W C/ ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 1 Publication Order Number: NTJD4105C/D NTJD4105C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source a o Sou ce Breakdown Voltage Drain-to-Source Breakdown a o Sou ce ea do Voltage Temperature Coefficient Zero Gate Voltage Drain Current e o Ga e o age a Cu e Ga e o Sou ce Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Ga e Threshold Voltage es o d o age Ga e Gate Threshold es o d Temperature Coefficient Drain-to-Source O Resistance a o Sou ce On es s a ce VGS(TH) VGS(TH) / TJ RDS(on) N P N P N P N P P N P N P N P N P N P N P N P N P N VGS=4.5 V, VDD=10 V, 4.5 10 , ID=0.5 A, RG=20 W P VGS=-4.5 V, VDD=-4.0 V, 4.5 4.0 ID=-0.5 A, RG=8.0 W , VGS=VDS ID=250 mA ID=-250 mA 0.6 -0.45 0.92 -0.83 -2.1 2.2 0.29 0.22 0.36 0.32 0.51 2.0 2.0 33 160 13 38 2.8 28 1.3 2.2 0.1 0.1 0.2 0.5 0.4 0.5 0.083 0.227 0.786 0.506 0.013 0.023 0.050 0.036 0.76 0.76 0.63 0.63 0.410 0.078 1.1 1.1 1.5 -1.0 V -mV/ C /C 0.375 0.30 0.445 0.46 0.90 W V(BR)DSS V(BR)DSS / TJ IDSS IGSS N P N P N P N P VGS=0 V ID=250 mA ID=-250 mA 20 -8.0 27 -10.5 22 -6.0 1.0 1.0 10 10 V mV/ C /C mA m m mA Symbol N/P Test Condition Min Typ Max Units VGS=0 V, VDS=16 V VGS=0 V, VDS=-6.4 V VDS=0 V TJ=25 C VGS=12 V VGS=8.0 Forward Transconductance o a d a sco duc a ce CHARGES AND CAPACITANCES Input Capacitance u Ca ac a ce Ou u Ca ac a ce Output Capacitance Reverse Transfer Ca ac a ce e e se a s e Capacitance Total Gate Charge o a Ga e C a ge Threshold Gate Charge es o d Ga e C a ge Ga e o Sou ce C a ge Gate-to-Source Charge Ga e o Gate-to-Drain Charge a C a ge gFS VGS=4.5 V ID=0.63 A VGS=-4.5 V, ID=-0.57 A VGS=2.5 V, ID=0.40 A VGS=-2.5 V, ID=-0.48 A VGS=-1.8 V, ID=-0.20 A VDS=4.0 V ID=0.63 A VDS=-4.0 V, ID=-0.57 A VDS=20 V VDS=-8.0V VDS=20 V f=1 MHz, VGS=0 V MHz VDS=-8.0 V VDS=20 V VDS=-8.0 V VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=-4.5 V, VDS=-5.0 V, ID=-0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=-4.5 V, VDS=-5.0 V, ID=-0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=-4.5 V, VDS=-5.0 V, ID=-0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=-4.5 V, VDS=-5.0 V, ID=-0.6 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD 46 225 22 55 5.0 40 3.0 4.0 pF nC C SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage o a d ode o age td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD ms DRAIN-SOURCE DIODE CHARACTERISTICS N P N P N P VGS=0 V, TJ=25C V VGS=0 V, TJ=125C V VGS=0 V, 0 dIS/dt=90 A/ms IS=0.23 A IS=-0.23 A IS=0.23 A IS=-0.23 A IS=0.23 A IS=-0.23 A V Reverse Recovery Time e e se eco e y e tRR ms 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4105C TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.4 ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 1.4 V 0.2 1.2 V 0 0 0 2 4 6 8 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.6 V VGS = 4.5 V to 2.2 V VGS = 2 V 1.8 V 1.2 TJ = 25C ID, DRAIN CURRENT (AMPS) 1 0.8 0.6 0.4 0.2 VDS 10 V TJ = 125C 25C TJ = -55C 1.6 0.4 0.8 1.2 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 TJ = 25C TJ = -55C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 Figure 2. Transfer Characteristics VGS = 4.5 V VGS = 2.5 V TJ = 125C TJ = 125C TJ = 25C TJ = -55C 0.3 0.2 0.1 0 0 0.2 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.4 1 0.6 0.8 ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 ID = 0.63 A VGS = 4.5 V and 2.5 V 80 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V C, CAPACITANCE (pF) 60 40 Ciss 20 Coss Crss 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTJD4105C TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.4 0 0.2 0.4 0.6 TJ = 150C TJ = 25C 0.8 1 2 1 0 0 0.2 ID = 0.63 A TJ = 25C 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4105C TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.4 -ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 -1.4 V 0.2 0 0 -1.2 V 2 4 6 8 -1.6 V VGS = -4.5 V to -2.6 V VGS = -2.2 V -2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -1.8 V 1.4 VDS -10 V 1.2 1 0.8 0.6 0.4 0.2 0 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 125C 25C TJ = -55C 0.4 0.8 1.2 2 1.6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 Figure 9. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 Figure 10. Transfer Characteristics VGS = -4.5 V VGS = -2.5 V TJ = 125C TJ = 25C TJ = -55C 0.4 0.4 0.3 TJ = 125C TJ = 25C TJ = -55C 0.3 0.2 0.2 0.1 0 0 0.2 0.8 0.6 0.4 1 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.1 0 0 0.2 0.4 1 0.8 0.6 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 11. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -0.7 A VGS = -4.5 V and -2.5 V 300 Figure 12. On-Resistance vs. Drain Current and Temperature TJ = 25C C, CAPACITANCE (pF) 240 Ciss 180 VGS = 0 V 1.4 1.2 1 120 Coss 60 Crss 0 -8 0.8 0.6 -50 -25 0 25 50 75 100 125 150 -6 -4 -2 0 TJ, JUNCTION TEMPERATURE (C) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 13. On-Resistance Variation with Temperature Figure 14. Capacitance Variation http://onsemi.com 5 NTJD4105C TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 -IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.4 0 0.2 0.4 0.6 TJ = 150C TJ = 25C 0.8 1 2 1 0 0 0.4 ID = -0.6 A TJ = 25C 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 15. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 16. Diode Forward Voltage vs. Current http://onsemi.com 6 NTJD4105C ORDERING INFORMATION1 Device NTJD4105CT1 NTJD4105CT1G NTJD4105CT2 NTJD4105CT2G NTJD4105CT4 NTJD4105CT4G Package SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTJD4105C PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE T A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M DIM A B C D G H J K N S B N M J C STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC-88/SC70-6 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTJD4105C/D |
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